|本期目录/Table of Contents|

[1]张凤林,周耐根,周 浪.失配性质对二维失配铝膜结构及位错形成的影响[J].有色金属科学与工程,2011,(05):18-23.
 ZHANG Feng-lin,ZHOU Nai-gen,ZHOU Lang.Effects of misfit characters on the structure and dislocation oftwo-dimensional misfit aluminium film[J].,2011,(05):18-23.
点击复制

失配性质对二维失配铝膜结构及位错形成的影响(/HTML)
分享到:

《有色金属科学与工程》[ISSN:1674-9669/CN:36-1311/TF]

卷:
期数:
2011年05期
页码:
18-23
栏目:
出版日期:
2011-10-30

文章信息/Info

Title:
Effects of misfit characters on the structure and dislocation oftwo-dimensional misfit aluminium film
作者:
张凤林12 周耐根1 周 浪1
1.南昌大学材料科学与工程学院,南昌 330047;2.江西理工大学应用科学学院,江西 赣州 341000
Author(s):
ZHANG Feng-lin12ZHOU Nai-gen1ZHOU Lang1
1. School of Material Science and Engineering,Nanchang University,Nanchang 330047,China; 2. School of Applied Science, Jiangxi University of Science and Technology, Ganzhou 341000, China
关键词:
位错二维失配分子动力学模拟薄膜晶体
分类号:
TG146.2;TF821
DOI:
-
文献标志码:
A
摘要:
采用三维分子动力学模拟方法,使用Ercolessi和Adams建立的嵌入原子法(EAM)多体势函数,模拟了二维失配铝膜晶体中失配位错的形成过程,研究了失配性质对二维失配铝膜结构及其形核机制的影响.结果显示:同等条件下,负失配度的临界厚度小于正失配度情况;负失配度较易出现失配位错;负失配度下位错的形成始于表层一个倒三角锥形的间隙原子团;正失配度下位错的形成始于表层原子的畸变区;结构稳定后,负失配度体系在表层挤出局部原子层;正失配度体系会出现塌陷.

参考文献/References:

[1] 吴自勤,王 兵.薄膜生长[M].北京:科学出版社,2001:122.
[2] Marée P M J,Barbour J C.Generation of misfit dislocationsin semi- conductors[J].J.App1.Phys.,1987,62(11):4413.
[3] Wegscheider W, Cerva H.Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layers[J].J. Vac.Sci. Techno1.B,1993,11(3):1056.
[4] Ichimura M, Narayan J. Role of surface step on misfit dislocation nucleation and critical thickness in semiconductor heterostructures[J]. Mater.Sci.Eng.B,1995,31(3):299-303.
[5] Smith R W, Srolovitz D J.Void formation during film growth:A molecular dynamics simulation study[J].J. App1.Phys.,1996,79:1448.
[6] Dong L, Selmitker J, Smith R W,et al. Stress relaxation and misfit dislocation nucleation in the growth of misfitting films:A molecular dynamics simulation study[J].J.Appl.Phys.,1998,83 (1):217.
[7] Liu W C, Huang H C.Dislocation nucleation and propagation during thin film deposition under compression [J].Computational Materials Science,2002,23:155.
[8] Liu W C, shi S Q, Woo C H, et al.Dislocation nucleation and propagation during thin film deposition under tension[J].Computer Modeling in Engineering and Sciences,2002,3(2):213.
[9] 周耐根,周 浪. 外延生长薄膜中失配位错形成条件的分子动力 学模拟研究[J].物理学报,2005,54(7):3278.
[10] 周耐根,周 浪.面心立方晶体外延膜沉积生长中失配位错的结 构与形成过程[J].物理学报,2006,55(1):372-376.
[11] 周耐根,周 浪.失配性质对面心立方外延晶体失配位错结构及 其形核机制的影响[J].人工晶体学报,2006,35(1):74-80.[l2] Gear C W.Numerical initial value problems in ordinary differential equation[M].Englewood Cliffs,NJ:Prentice-Hall,1971:1-54.[l3] Ercolessi F, Adams J.Interatomic potentials from 1st-principles calculations-the force-matching method[J].Europhysics Letters,1994, 26:583.[l4] Bockstedte M,Liu S J,Huang H C.Diffusion of clusters down(111) aluminum islands[J].Computational Mutrials Science,2002,23(4): 85.[l5] 周耐根,周 浪.<111>铜膜中孪晶形成与出现几率的分子动力学 模拟[J].金属学报,2004,40(9):897.[l6] 卢 敏,周耐根,周 浪.温度对金属纳米线势能分布的影响[J].原 子与分子物理学报,2007,24(3):582.

相似文献/References:

备注/Memo

备注/Memo:
收稿日期:2011-07-06基金项目:国家自然科学基金项目(10502024)作者简介:张凤林(1980- ),男,讲师,主要研究方向为纳米材料结构的计算机模拟,E-mail:zhangfenglin0927@163.com.
更新日期/Last Update: 2011-11-07