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[1]雷萌,尹从岭,雷秀云.新型层状多阴离子化合物Bi3O3SeBr的晶体结构和物理性质[J].有色金属科学与工程,2019,(03):6-10.
 LEI Meng,YIN Congling,LEI Xiuyun.Novel layered compound Bi3O3SeBr with multi-anions: crystal structure and physical properties[J].,2019,(03):6-10.
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新型层状多阴离子化合物Bi3O3SeBr的晶体结构和物理性质(/HTML)
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《有色金属科学与工程》[ISSN:1674-9669/CN:36-1311/TF]

卷:
期数:
2019年03期
页码:
6-10
栏目:
出版日期:
2019-05-20

文章信息/Info

Title:
Novel layered compound Bi3O3SeBr with multi-anions: crystal structure and physical properties
作者:
雷萌尹从岭雷秀云
(江西理工大学材料学院,江西 赣州 341000 )
Author(s):
LEI Meng YIN Congling LEI Xiuyun
(School of Material Science and Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, China)
关键词:
晶体结构粉末衍射层状结构光电性能多阴离子化合物
分类号:
TD724;O611.4;TQ129
DOI:
-
文献标志码:
A
摘要:
采用传统高温固相法合成了Bi3O3SeBr,采用粉末衍射、第一性原理计算、漫反射光谱和光电性能测试,系统研究了Bi3O3SeBr的晶体结构和物理性质.结果表明:Bi3O3SeBr为四方晶系,空间群为P4/nmm,晶胞参数a = 3.92284(6) ?,c = 20.23814(3) ?.其晶体结构中包含有3种原子层:Bi2O2层,Se2-离子层和Br-离子双层.Se2-离子层和Br-离子双层位于Bi2O2层中间,形成Bi2O2Se和BiOBr结构单元.Bi3O3SeBr可以看做是由Bi2O2Se和BiOBr结构单元沿着c方向共用Bi2O2层而组成的.Bi3O3SeBr为间接带隙的n-型半导体,间接带隙为0.42 eV .价带顶部的能态是由Se 4p能带所决定,而导带底的能态主要由Bi 6p能带构成.在可见光照射下Bi3O3SeBr表现出稳定的光电性能,其光生电流密度为0.70 A/cm2,高于Bi2O2Se,在光电探测领域具备一定应用前景

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备注/Memo

备注/Memo:
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更新日期/Last Update: 2019-04-19